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Guangzhou's Nansha establishes whole chain of wide-bandgap semiconductor
Update: 2022-05-20     Source: Newsgd.com

On May 17, Guangzhou's Nansha District announced that the project of Xinyueneng Silicon Carbide Chip Manufacture has completed the main structure construction in a signing ceremony of essential projects for the second quarter.

“This project fills in the gaps of mass production of vehicle-level silicon carbide chips in Guangdong Province,” said Xiao Guowei, chairman of Guangdong Xinyueneng semiconductor Co. Ltd.. There are already chip design, packaging and testing and material preparation sectors for wide-bandgap semiconductor in Guangzhou's Nansha District. Focusing on manufacturing, the project of Xinyueneng Silicon Carbide Chip Manufacture completes the ecosystem of the whole industrial chain of wide-bandgap semiconductor in Nansha District.

(Photo by Liu Wei)

According to Xiao, the total investment for the project of Xinyueneng Silicon Carbide Chip Manufacture is 7.5 billion RMB, covering 24.71 acres.

The project's first phase, with an investment of 3.5 billion RMB, plans to construct a 6-inch diameter silicon carbide wafers production line with an annual production capacity of 240 thousand pieces. In the second phase, an 8-inch diameter silicon carbide wafers production line with an annual production capacity of 240 thousand pieces will be built.

The products of this project include SiC SBD/JBS, MOSFET, IGBT and other power devices, mainly used in new energy vehicles, charging piles, industrial electrical power, smart grid, photovoltaics and other fields. The annual production value is estimated to be 10 billion RMB.

This project is located in Nansha District Integrated Circuits Industrial Park, located at the southwest of the Processing and Manufacturing Area, Wanqingsha Bonded Port Area (万顷沙保税港区加工制造业区块西南部), covering an area of 1.97 square kilometers. In the industrial park, the projects of Nansha Silicon Carbide Wafers Single Crystal Materials and Wafers Manufacture (materials), Xinjuneng New Energy Vehicles Third Generation Semiconductor Research and Manufacture Base (design, packaging and testing, discrete device ), and Lianjing Smart LED Vehicle Light Module Research and Manufacture Base (application) have completed construction.

(Photo by Liu Wei)

Moreover, involving a 30 billion-RMB investment, 9 other projects related to semiconductor integrated circuit industry have signed contracts on May 17. The annual production value is estimated to be 63 billion RMB, which will be a new impetus to Nansha District's high quality development.

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